Smart Modular SH564128FH8NZQNSCG 4GB vs Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

报告一个错误

更快的读取速度，GB/s

15.6 9.4

测试中的平均数值
更快的写入速度，GB/s

10.4 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

9.4 15.6
写入速度，GB/s

5.5 10.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 2688

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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Kingston 9905744-066.A00G 32GB

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G Skill Intl F4-3333C16-8GTZSW 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Samsung M393B1K70CH0-CH9 8GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

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Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

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Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

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Samsung M3 91T2953GZ3-CF7 1GB

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB