Smart Modular SH564128FH8NZQNSCG 4GB vs G Skill Intl F4-3000C15-16GVR 16GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

G Skill Intl F4-3000C15-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3000C15-16GVR 16GB

报告一个错误

更快的读取速度，GB/s

17.5 9.4

测试中的平均数值
更快的写入速度，GB/s

14.2 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-3000C15-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

9.4 17.5
写入速度，GB/s

5.5 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 3520

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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Essencore Limited KD44GU481-26N1600 4GB

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V-Color Technology Inc. TA48G30S815GK 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Crucial Technology CT8G4DFRA32A.C4FE 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Apacer Technology 78.BAGN8.AZC0B 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Apacer Technology D22.23263S.002 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4000C16-8GVK 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Panram International Corporation W4U2400PS-8G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB