Smart Modular SH564128FH8NZQNSCG 4GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 35% 更低的延时

Micron Technology 9ASF51272PZ-2G1A2 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1A2 4GB

报告一个错误

更快的读取速度，GB/s

11.4 9.4

测试中的平均数值
更快的写入速度，GB/s

9.5 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 43
读取速度，GB/s

9.4 11.4
写入速度，GB/s

5.5 9.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 2532

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.M8FB 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Corsair CMD32GX4M4A2800C16 8GB

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Crucial Technology CT8G4DFS8266.C8FJ 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

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Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB