RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M471A2K43BB1-CTD 16GB

Smart Modular SH564128FH8NZQNSCG 4GB vs Samsung M471A2K43BB1-CTD 16GB

总分
star star star star star
Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分
star star star star star
Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

差异 规格 评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB 需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB
报告一个错误
Samsung M471A2K43BB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43BB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M471A2K43BB1-CTD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    9.4 left arrow 17.0
  • 写入速度，GB/s
    5.5 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1453 left arrow 3156

Smart Modular SH564128FH8NZQNSCG 4GB RAM的比较

Smart Modular SG572124ABS857P2SF 4GB
Mushkin 992046 (997046) 4GB

Samsung M471A2K43BB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Avant Technology J641GU49J2320NE 8GB
Avant Technology J641GU49J2320NE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G32C16U4R.M16FE 16GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Apacer Technology D12.2324CS.001 8GB
Apacer Technology D12.2324CS.001 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16HTF25664HZ-800E1 2GB
Micron Technology 16HTF25664HZ-800E1 2GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M4B3000C15 4GB
Corsair CMK16GX4M4B3000C15 4GB
内存RAM
A-DATA Technology DDR3 1866 8GB
A-DATA Technology DDR3 1866 8GB
Corsair CMK8GX4M2B3733C17 4GB
Corsair CMK8GX4M2B3733C17 4GB
内存RAM