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A-DATA Technology VDQVE1B16 2GB
Micron Technology 16HTF25664HZ-800E1 2GB

A-DATA Technology VDQVE1B16 2GB vs Micron Technology 16HTF25664HZ-800E1 2GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Micron Technology 16HTF25664HZ-800E1 2GB

Micron Technology 16HTF25664HZ-800E1 2GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 53
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 1,618.9
    测试中的平均数值
Micron Technology 16HTF25664HZ-800E1 2GB 需要考虑的原因
Micron Technology 16HTF25664HZ-800E1 2GB
报告一个错误

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16HTF25664HZ-800E1 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    46 left arrow 53
  • 读取速度，GB/s
    4,937.3 left arrow 3,960.7
  • 写入速度，GB/s
    2,061.2 left arrow 1,618.9
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    759 left arrow 610

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Micron Technology 16HTF25664HZ-800E1 2GB RAM的比较

Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Kingston 9905624-010.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
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Kingston 9905630-033.A00G 16GB
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Kingston 99P5474-014.A00LF 4GB
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AMD AE34G1601U1 4GB
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Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
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内存RAM