Samsung 1600 CL10 Series 8GB vs Kingston 9965604-027.D00G 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston 9965604-027.D00G 8GB

Kingston 9965604-027.D00G 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时
更快的读取速度，GB/s

16.1 10.5

测试中的平均数值
更快的写入速度，GB/s

10.1 8.0

测试中的平均数值

Kingston 9965604-027.D00G 8GB

需要考虑的原因
Kingston 9965604-027.D00G 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston 9965604-027.D00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

16.1 10.5
写入速度，GB/s

10.1 8.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2262

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

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Kingston 9905625-030.A00G 8GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMG16GX4M2E3200C16 8GB

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Kingston KHX1866C9D3/8GX 8GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3333C16-16GTZ 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB