Smart Modular SH564128FH8NZQNSCG 4GB vs SK Hynix HMA82GS6MFR8N-TF 16GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

SK Hynix HMA82GS6MFR8N-TF 16GB

SK Hynix HMA82GS6MFR8N-TF 16GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 28% 更低的延时

SK Hynix HMA82GS6MFR8N-TF 16GB

需要考虑的原因
SK Hynix HMA82GS6MFR8N-TF 16GB

报告一个错误

更快的读取速度，GB/s

13.3 9.4

测试中的平均数值
更快的写入速度，GB/s

9.4 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

SK Hynix HMA82GS6MFR8N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 39
读取速度，GB/s

9.4 13.3
写入速度，GB/s

5.5 9.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 2419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32NC8T1-BCSS 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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G Skill Intl F4-4000C19-16GTRG 16GB

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Corsair CM2X1024-8500C5D 1GB

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Micron Technology 18ASF1G72PDZ-2G6E1 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 99U5474-010.A00LF 2GB

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PNY Electronics PNY 2GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-3466C16-8GVR 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB