SpecTek Incorporated ?????????????????? 2GB

Chun Well Technology Holding Limited D4U0830160B 8GB

SpecTek Incorporated ?????????????????? 2GB vs Chun Well Technology Holding Limited D4U0830160B 8GB

总分

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

差异规格评论

差异

SpecTek Incorporated ?????????????????? 2GB

需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB

报告一个错误

更快的读取速度，GB/s

4 17.4

测试中的平均数值

Chun Well Technology Holding Limited D4U0830160B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0830160B 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 54

左右 -69% 更低的延时
更快的写入速度，GB/s

12.5 1,781.8

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SpecTek Incorporated ?????????????????? 2GB

Chun Well Technology Holding Limited D4U0830160B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 32
读取速度，GB/s

4,269.3 17.4
写入速度，GB/s

1,781.8 12.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

618 3137

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Chun Well Technology Holding Limited D4U0830160B 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston XCCT36-MIE 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Corsair CMW16GX4M1Z3600C18 16GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-4266C19-8GTRG 8GB