SpecTek Incorporated ?????????????????? 2GB vs Crucial Technology BL16G36C16U4RL.M16FE 16GB

总分

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

差异规格评论

差异

SpecTek Incorporated ?????????????????? 2GB

需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值

Crucial Technology BL16G36C16U4RL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4RL.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的写入速度，GB/s

14.1 1,781.8

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

4,269.3 15.9
写入速度，GB/s

1,781.8 14.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

618 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Kingston 9965604-008.C00G 8GB

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Samsung M471A1G44AB0-CWE 8GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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PUSKILL DDR3 1600 8G 8GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905678-044.A00G 8GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston KHX2666C15/16GX 16GB

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Peak Electronics 256X64M-67E 2GB

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Micron Technology 36ASF2G72PZ-2G3B1 16GB