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SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3866C18-8GTZR 8GB

SpecTek Incorporated ?????????????????? 2GB vs G Skill Intl F4-3866C18-8GTZR 8GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18
    测试中的平均数值
G Skill Intl F4-3866C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 54
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 27
  • 读取速度，GB/s
    4,269.3 left arrow 18.0
  • 写入速度，GB/s
    1,781.8 left arrow 14.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    618 left arrow 3531

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

G Skill Intl F4-3866C18-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2133C15-8GFT 8GB
G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMR32GX4M4C3200C16 8GB
Corsair CMR32GX4M4C3200C16 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
ISD Technology Limited KD48GU880-32A160X 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW16GX4M2D3600C18 8GB
Corsair CMW16GX4M2D3600C18 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Essencore Limited KD48GS88J-26N1900 8GB
Essencore Limited KD48GS88J-26N1900 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR16GX4M2D3200C16 8GB
Corsair CMR16GX4M2D3200C16 8GB
内存RAM