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SpecTek Incorporated ?????????????????? 2GB
Gloway International (HK) STK4U2133D15081C 8GB

SpecTek Incorporated ?????????????????? 2GB vs Gloway International (HK) STK4U2133D15081C 8GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.8
    测试中的平均数值
Gloway International (HK) STK4U2133D15081C 8GB 需要考虑的原因
Gloway International (HK) STK4U2133D15081C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 54
    左右 -145% 更低的延时
  • 更快的写入速度，GB/s
    12.3 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
Gloway International (HK) STK4U2133D15081C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 22
  • 读取速度，GB/s
    4,269.3 left arrow 16.8
  • 写入速度，GB/s
    1,781.8 left arrow 12.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    618 left arrow 3036

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

Gloway International (HK) STK4U2133D15081C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT4G4SFS824A.M8FE 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA84GR7AFR4N-VK 32GB
SK Hynix HMA84GR7AFR4N-VK 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMWX8GF2933Z16W4 8GB
Corsair CMWX8GF2933Z16W4 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM