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SpecTek Incorporated ?????????????????? 2GB
Micron Technology 16G3200CL22 16GB

SpecTek Incorporated ?????????????????? 2GB vs Micron Technology 16G3200CL22 16GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14
    测试中的平均数值
Micron Technology 16G3200CL22 16GB 需要考虑的原因
Micron Technology 16G3200CL22 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 54
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    7.3 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 16G3200CL22 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 28
  • 读取速度，GB/s
    4,269.3 left arrow 14.0
  • 写入速度，GB/s
    1,781.8 left arrow 7.3
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    618 left arrow 2663

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

Micron Technology 16G3200CL22 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
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内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM