SpecTek Incorporated ?????????????????? 2GB vs Samsung M471A5244CB0-CRC 4GB

总分

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

差异规格评论

差异

SpecTek Incorporated ?????????????????? 2GB

需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB

报告一个错误

更快的读取速度，GB/s

4 14.4

测试中的平均数值

Samsung M471A5244CB0-CRC 4GB

需要考虑的原因
Samsung M471A5244CB0-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 54

左右 -46% 更低的延时
更快的写入速度，GB/s

10.4 1,781.8

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SpecTek Incorporated ?????????????????? 2GB

Samsung M471A5244CB0-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 37
读取速度，GB/s

4,269.3 14.4
写入速度，GB/s

1,781.8 10.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

618 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F4-2400C15-4GRR 4GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Essencore Limited KD48GU880-32A160U 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Corsair CMW64GX4M8X3600C18 8GB

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Corsair CMK32GX4M4Z3200C16 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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PUSKILL PJ16TFK1GM8 16GB

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Corsair CMSX4GX4M1A2400C16 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3200C16-4GVK 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston 9965604-033.D00G 16GB

Kingston 9965604-033.D00G 16GB

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Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB