STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMK4GX4M1A2400C14 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMK4GX4M1A2400C14 4GB

Corsair CMK4GX4M1A2400C14 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

Corsair CMK4GX4M1A2400C14 4GB

需要考虑的原因
Corsair CMK4GX4M1A2400C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 63

左右 -110% 更低的延时
更快的写入速度，GB/s

13.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK4GX4M1A2400C14 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 30
读取速度，GB/s

3,231.0 18.2
写入速度，GB/s

1,447.3 13.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK4GX4M1A2400C14 4GB

Corsair CMK4GX4M1A2400C14 4GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Jinyu CL16-16-16 D4-2400 8GB

Jinyu CL16-16-16 D4-2400 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Kingston 99U5428-046.A00LF 4GB

Kingston 99U5428-046.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB