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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMSX16GX4M2A3000C16 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMSX16GX4M2A3000C16 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Corsair CMSX16GX4M2A3000C16 8GB

Corsair CMSX16GX4M2A3000C16 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
Corsair CMSX16GX4M2A3000C16 8GB 需要考虑的原因
Corsair CMSX16GX4M2A3000C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 63
    左右 -133% 更低的延时
  • 更快的写入速度，GB/s
    13.1 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMSX16GX4M2A3000C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 27
  • 读取速度，GB/s
    3,231.0 left arrow 16.5
  • 写入速度，GB/s
    1,447.3 left arrow 13.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    478 left arrow 3061

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Corsair CMSX16GX4M2A3000C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
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A-DATA Technology AD5U48008G-B 8GB
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Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CMSX16GX4M2A3000C16 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
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SK Hynix HMT325S6CFR8C-H9 2GB
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G Skill Intl F4-3600C14-16GTRG 16GB
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Samsung M471A5244CB0-CWE 4GB
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Kingston KHX3466C16D4/16GX 16GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston 9905471-076.A00LF 8GB
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G Skill Intl F4-3600C17-4GTZ 4GB
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SK Hynix HYMP125S64CP8-S6 2GB
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内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Samsung M378A2K43EB1-CWE 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Corsair CMK16GX4M4A2133C13 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
内存RAM