STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMW16GX4M2D3000C16 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMW16GX4M2D3000C16 8GB

Corsair CMW16GX4M2D3000C16 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值

Corsair CMW16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMW16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 63

左右 -91% 更低的延时
更快的写入速度，GB/s

13.3 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMW16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 33
读取速度，GB/s

3,231.0 16.5
写入速度，GB/s

1,447.3 13.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 3298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR2 800G 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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PNY Electronics PNY 2GB

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3600C19-16GSXF 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9965589-017.D00G 8GB

Kingston 9965589-017.D00G 8GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB