RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BL16G36C16U4BL.M16FE 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Crucial Technology BL16G36C16U4BL.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
19.7
测试中的平均数值
需要考虑的原因
Crucial Technology BL16G36C16U4BL.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
63
左右 -163% 更低的延时
更快的写入速度,GB/s
18.4
1,447.3
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
24
读取速度,GB/s
3,231.0
19.7
写入速度,GB/s
1,447.3
18.4
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
478
4182
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Kingston 9905403-011.A03LF 2GB
Panram International Corporation M424016 4GB
G Skill Intl F4-3000C15-8GVKB 8GB
Corsair CMW16GX4M1D3000C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8213.M16FB 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Samsung M3 93T5750CZA-CE6 2GB
Essencore Limited KD4AGU880-36A180U 16GB
Kingston 9965525-140.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M471B5273DH0-CK0 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2933C14-8GFX 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C14-8GVK 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3733C17-8GTZKK 8GB
报告一个错误
×
Bug description
Source link