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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BLS16G4S240FSD.16FAD 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Crucial Technology BLS16G4S240FSD.16FAD 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
10.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FAD 16GB
报告一个错误
低于PassMark测试中的延时,ns
48
63
左右 -31% 更低的延时
更快的写入速度,GB/s
8.5
1,447.3
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
48
读取速度,GB/s
3,231.0
10.4
写入速度,GB/s
1,447.3
8.5
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
478
1858
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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报告一个错误
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