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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
17.1
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
63
左右 -110% 更低的延时
更快的写入速度,GB/s
13.5
1,447.3
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
30
读取速度,GB/s
3,231.0
17.1
写入速度,GB/s
1,447.3
13.5
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
478
3292
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5471-020.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
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Crucial Technology CT8G4SFD824A.C16FF 8GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK128GX4M4A2400C16 32GB
SK Hynix HYMP512U64CP8-Y5 1GB
Kingston KHX3200C16D4/32GX 32GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3000C16-16GVRB 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A5143DB0-CPB 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZKKF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M391A1K43BB2-CTD 8GB
报告一个错误
×
Bug description
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