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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C14-16GTZSW 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3200C14-16GTZSW 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
G Skill Intl F4-3200C14-16GTZSW 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
20.6
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3200C14-16GTZSW 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
63
左右 -142% 更低的延时
更快的写入速度,GB/s
16.7
1,447.3
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C14-16GTZSW 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
26
读取速度,GB/s
3,231.0
20.6
写入速度,GB/s
1,447.3
16.7
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
478
4084
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
G Skill Intl F4-3200C14-16GTZSW 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CM2X1024-8500C5D 1GB
Kingston KHX3466C19D4/16G 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M471A2K43EB1-CWE 16GB
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A-DATA Technology DQVE1908 512MB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386A4G40DM1-CRC 32GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
G Skill Intl F4-3200C16-8GTRG 8GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
报告一个错误
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Bug description
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