STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3600C17-8GTZKW 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值

G Skill Intl F4-3600C17-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 63

左右 -142% 更低的延时
更快的写入速度，GB/s

14.5 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3600C17-8GTZKW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 26
读取速度，GB/s

3,231.0 17.7
写入速度，GB/s

1,447.3 14.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 3547

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.B1GM3.C7W0B 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Corsair CMK8GX4M2D2666C16 4GB

Corsair CMK8GX4M2D2666C16 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB