STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston KHX3200C20S4/32GX 32GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Kingston KHX3200C20S4/32GX 32GB

Kingston KHX3200C20S4/32GX 32GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值

Kingston KHX3200C20S4/32GX 32GB

需要考虑的原因
Kingston KHX3200C20S4/32GX 32GB

报告一个错误

低于PassMark测试中的延时，ns

29 63

左右 -117% 更低的延时
更快的写入速度，GB/s

16.4 1,447.3

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston KHX3200C20S4/32GX 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 29
读取速度，GB/s

3,231.0 17.8
写入速度，GB/s

1,447.3 16.4
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

478 3765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited D4U0836181B 8GB

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Corsair CMW16GX4M2Z3200C16 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston 99U5711-001.A00G 4GB

Kingston 99U5711-001.A00G 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB