STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Ramaxel Technology RMSA3260MB78HAF2400 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.6

测试中的平均数值

Ramaxel Technology RMSA3260MB78HAF2400 8GB

需要考虑的原因
Ramaxel Technology RMSA3260MB78HAF2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的写入速度，GB/s

9.9 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

3,231.0 13.6
写入速度，GB/s

1,447.3 9.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2360

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CE6 2GB

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Apacer Technology 76.D305G.D060B 16GB

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Avant Technology W642GU42J2320NH 16GB

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SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4SFRA32A.M8FRS 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB