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Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 76.D305G.D060B 16GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Apacer Technology 76.D305G.D060B 16GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Apacer Technology 76.D305G.D060B 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
16.6
测试中的平均数值
更快的写入速度,GB/s
2,168.2
13.4
测试中的平均数值
需要考虑的原因
Apacer Technology 76.D305G.D060B 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
60
左右 -82% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 76.D305G.D060B 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
33
读取速度,GB/s
4,595.2
16.6
写入速度,GB/s
2,168.2
13.4
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
941
3089
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Apacer Technology 76.D305G.D060B 16GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5403-492.A00LF 8GB
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A-DATA Technology DQVE1908 512MB
Corsair CMD32GX4M4C3200C14T 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Samsung M471A4G43BB1-CWE 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Corsair CML8GX3M2A1600C9 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Apacer Technology 78.A1GC6.9H10C 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
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Crucial Technology BL16G36C16U4BL.M8FB1 16GB
报告一个错误
×
Bug description
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