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Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 76.D305G.D060B 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Apacer Technology 76.D305G.D060B 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Apacer Technology 76.D305G.D060B 16GB

Apacer Technology 76.D305G.D060B 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 13.4
    测试中的平均数值
Apacer Technology 76.D305G.D060B 16GB 需要考虑的原因
Apacer Technology 76.D305G.D060B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 60
    左右 -82% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 76.D305G.D060B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 33
  • 读取速度，GB/s
    4,595.2 left arrow 16.6
  • 写入速度，GB/s
    2,168.2 left arrow 13.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3089

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Apacer Technology 76.D305G.D060B 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M393A4K40BB2-CTD 32GB
Samsung M393A4K40BB2-CTD 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMK32GX4M4A2400C16 8GB
Corsair CMK32GX4M4A2400C16 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston K821PJ-MID 16GB
Kingston K821PJ-MID 16GB
内存RAM