TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMK32GX4M4B3200C14 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMK32GX4M4B3200C14 8GB

Corsair CMK32GX4M4B3200C14 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19

测试中的平均数值
更快的写入速度，GB/s

870.4 14.5

测试中的平均数值

Corsair CMK32GX4M4B3200C14 8GB

需要考虑的原因
Corsair CMK32GX4M4B3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 87

左右 -335% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK32GX4M4B3200C14 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 20
读取速度，GB/s

3,155.6 19.0
写入速度，GB/s

870.4 14.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3462

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Essencore Limited KD48GU880-36A180Z 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston X75V1H-MIE 32GB

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Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB