STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs SK Hynix HMA451S6AFR8N-TF 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.9

测试中的平均数值

SK Hynix HMA451S6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451S6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 63

左右 -70% 更低的延时
更快的写入速度，GB/s

10.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA451S6AFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 37
读取速度，GB/s

3,231.0 13.9
写入速度，GB/s

1,447.3 10.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-013.A00LF 2GB

Kingston 9965640-035.C00G 32GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2400C15-16GTZRX 16GB

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Kingston 9905316-106.A02LF 1GB

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Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

G Skill Intl F3-1333C9-4GIS 4GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMT16GX4M2K4000C19 8GB

Corsair CMT16GX4M2K4000C19 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston 9965640-016.A00G 32GB

Kingston 9965640-016.A00G 32GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Apacer Technology GD2.1831WS.001 16GB

Apacer Technology GD2.1831WS.001 16GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMR64GX4M4C3466C16 16GB

Corsair CMR64GX4M4C3466C16 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston CBD24D4S7D8ME-16 16GB

Kingston CBD24D4S7D8ME-16 16GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB