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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA81GU7AFR8N-UH 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs SK Hynix HMA81GU7AFR8N-UH 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
SK Hynix HMA81GU7AFR8N-UH 8GB

SK Hynix HMA81GU7AFR8N-UH 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.1
    测试中的平均数值
SK Hynix HMA81GU7AFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GU7AFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 63
    左右 -152% 更低的延时
  • 更快的写入速度，GB/s
    9.0 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA81GU7AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 25
  • 读取速度，GB/s
    3,231.0 left arrow 14.1
  • 写入速度，GB/s
    1,447.3 left arrow 9.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    478 left arrow 2450

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

SK Hynix HMA81GU7AFR8N-UH 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CM4X16GF3200C22S2 16GB
Corsair CM4X16GF3200C22S2 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK32GX4M4B3733C17 8GB
Corsair CMK32GX4M4B3733C17 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9965589-006.E00G 8GB
Kingston 9965589-006.E00G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM