STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Teikon TMA41GU6AFR8N-TFSC 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值

Teikon TMA41GU6AFR8N-TFSC 8GB

需要考虑的原因
Teikon TMA41GU6AFR8N-TFSC 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 63

左右 -110% 更低的延时
更快的写入速度，GB/s

12.9 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Teikon TMA41GU6AFR8N-TFSC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 30
读取速度，GB/s

3,231.0 17.5
写入速度，GB/s

1,447.3 12.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2807

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR32D4S2S8ME-16 16GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

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SK Hynix HMA81GS6CJR8N-VK 8GB

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Crucial Technology CT8G4SFRA32A.C8FE 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMK16GX4M2C3000C16 8GB

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Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB