Strontium EVMT8G1600U86S 8GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB

总分

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

总分

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

差异规格评论

差异

Strontium EVMT8G1600U86S 8GB

需要考虑的原因
Strontium EVMT8G1600U86S 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 28% 更低的延时

Micron Technology 16ATF4G64HZ-3G2E2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E2 32GB

报告一个错误

更快的读取速度，GB/s

15.5 11.7

测试中的平均数值
更快的写入速度，GB/s

11.9 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Strontium EVMT8G1600U86S 8GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 43
读取速度，GB/s

11.7 15.5
写入速度，GB/s

7.2 11.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1990 2864

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-8GVR 8GB

G Skill Intl F4-2400C17-8GVR 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

Corsair CMZ8GX3M2A1600C9G 4GB

Corsair CMZ8GX3M2A1600C9G 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905713-019.A00G 4GB

Kingston 9905713-019.A00G 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Micron Technology 18JSF1G72PZ-1G6D1 8GB

Micron Technology 18JSF1G72PZ-1G6D1 8GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

Kingston 99U5403-050.A00LF 4GB

Kingston 99U5403-050.A00LF 4GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston 9905713-035.A00G 8GB

Kingston 9905713-035.A00G 8GB