Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2400C17-8GVR 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-2400C17-8GVR 8GB

G Skill Intl F4-2400C17-8GVR 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 15.5

测试中的平均数值

G Skill Intl F4-2400C17-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 46

左右 -92% 更低的延时
更快的写入速度，GB/s

9.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 24
读取速度，GB/s

2,909.8 15.5
写入速度，GB/s

1,519.2 9.4
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2479

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Crucial Technology CT102464BA160B.M16 8GB

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Jinyu CL16-16-16 D4-2400 8GB

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Crucial Technology CT16G4SFD8266 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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Samsung M378B5273CH0-CH9 4GB

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Kingston CBD26D4U9S8ME-8 8GB

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Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB