Strontium SRP2G86U1-S6M 2GB vs Kingston KYXC0V-MID 16GB

总分

Strontium SRP2G86U1-S6M 2GB

Strontium SRP2G86U1-S6M 2GB

总分

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

差异规格评论

差异

Strontium SRP2G86U1-S6M 2GB

需要考虑的原因
Strontium SRP2G86U1-S6M 2GB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值
更快的写入速度，GB/s

2,400.0 11.5

测试中的平均数值

Kingston KYXC0V-MID 16GB

需要考虑的原因
Kingston KYXC0V-MID 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 70

左右 -94% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Strontium SRP2G86U1-S6M 2GB

Kingston KYXC0V-MID 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 36
读取速度，GB/s

4,161.3 15.2
写入速度，GB/s

2,400.0 11.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

552 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

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Kingston 99U5474-023.A00LF 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB