Swissbit MEU25664D6BC2EP-30 2GB vs A-DATA Technology AO1P26KCST2-BZISHC 16GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

A-DATA Technology AO1P26KCST2-BZISHC 16GB

需要考虑的原因
A-DATA Technology AO1P26KCST2-BZISHC 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 68

左右 -89% 更低的延时
更快的写入速度，GB/s

14.2 1,944.9

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 36
读取速度，GB/s

3,973.0 15.5
写入速度，GB/s

1,944.9 14.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

673 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43BB1-CTD 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 8ATF1G64HZ-2G6B1 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Micron Technology CT8G4DFD8213.16FA2 8GB

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Kingston 99U5474-038.A00LF 4GB

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SK Hynix HMA851U6JJR6N-VK 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-2800C16-8GRK 8GB

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Kingston 9965669-018.A00G 16GB

Kingston CBD24D4S7D8MA-16 16GB

Kingston CBD24D4S7D8MA-16 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB