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Swissbit MEU25664D6BC2EP-30 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Swissbit MEU25664D6BC2EP-30 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分
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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

差异 规格 评论

差异

Swissbit MEU25664D6BC2EP-30 2GB 需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.1
    测试中的平均数值
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 68
    左右 -143% 更低的延时
  • 更快的写入速度，GB/s
    14.8 left arrow 1,944.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Swissbit MEU25664D6BC2EP-30 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 28
  • 读取速度，GB/s
    3,973.0 left arrow 18.1
  • 写入速度，GB/s
    1,944.9 left arrow 14.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    673 left arrow 3564

Swissbit MEU25664D6BC2EP-30 2GB RAM的比较

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较

G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 99P5471-002.A00LF 2GB
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内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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