Swissbit MEU25664D6BC2EP-30 2GB vs Corsair CMR32GX4M2F3600C18 16GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Corsair CMR32GX4M2F3600C18 16GB

Corsair CMR32GX4M2F3600C18 16GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 19.1

测试中的平均数值

Corsair CMR32GX4M2F3600C18 16GB

需要考虑的原因
Corsair CMR32GX4M2F3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 68

左右 -172% 更低的延时
更快的写入速度，GB/s

16.3 1,944.9

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Corsair CMR32GX4M2F3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 25
读取速度，GB/s

3,973.0 19.1
写入速度，GB/s

1,944.9 16.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

673 4052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2666C18-4GFX 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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G Skill Intl F4-4000C19-16GTRG 16GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Samsung M378A2G43MX3-CTD 16GB

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Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CM4B4G1J2400A14K 4GB

Corsair CM4B4G1J2400A14K 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB