Swissbit MEU25664D6BC2EP-30 2GB vs Crucial Technology BLS16G4D240FSE.16FBD 16GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 15.4

测试中的平均数值

Crucial Technology BLS16G4D240FSE.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 68

左右 -94% 更低的延时
更快的写入速度，GB/s

9.9 1,944.9

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 35
读取速度，GB/s

3,973.0 15.4
写入速度，GB/s

1,944.9 9.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

673 2765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston KF552C40-16 16GB

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AMD R744G2133U1S 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Crucial Technology BLS16G4D240FSE.16FBD 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 9905630-018.A00G 8GB

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Kingston 99U5474-013.A00LF 2GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

SK Hynix V-GeN D3H8GL1600RN 8GB

SK Hynix V-GeN D3H8GL1600RN 8GB

Mushkin 99[2/7/4]204[F/T] 4GB

Mushkin 99[2/7/4]204[F/T] 4GB