Swissbit MEU25664D6BC2EP-30 2GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 14.5

测试中的平均数值

Crucial Technology CT16G4SFD824A.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 68

左右 -94% 更低的延时
更快的写入速度，GB/s

10.6 1,944.9

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 35
读取速度，GB/s

3,973.0 14.5
写入速度，GB/s

1,944.9 10.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

673 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMR32GX4M4C3000C16 8GB

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G Skill Intl F4-2400C15-8GIS 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMT32GX4M2C3200C16 16GB

Corsair CMT32GX4M2C3200C16 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston HX424C15FB/8 8GB

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Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB

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G Skill Intl F3-2400C11-8GSR 8GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB