Swissbit MEU25664D6BC2EP-30 2GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

InnoDisk Corporation M4S0-8GSSOCIK 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCIK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 68

左右 -183% 更低的延时
更快的写入速度，GB/s

8.7 1,944.9

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 24
读取速度，GB/s

3,973.0 15.9
写入速度，GB/s

1,944.9 8.7
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

673 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Ramaxel Technology RMUA5090KB78HAF2133 8GB

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Apacer Technology 78.A1GA0.9L4 2GB

Corsair CMWX8GF2933Z19W8 8GB

Corsair CMWX8GF2933Z19W8 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston KHX3200C16D4/32GX 32GB

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Samsung M4 70T5663CZ3-CE6 2GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB