Samsung M4 70T5663CZ3-CE6 2GB vs Kingston K821PJ-MIB 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值

Kingston K821PJ-MIB 16GB

需要考虑的原因
Kingston K821PJ-MIB 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 69

左右 -86% 更低的延时
更快的写入速度，GB/s

11.0 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Kingston K821PJ-MIB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 37
读取速度，GB/s

3,325.1 13.8
写入速度，GB/s

1,441.2 11.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 99U5584-004.A00LF 4GB

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PNY Electronics 4GBH2X02E99927-16 4GB

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Crucial Technology BLE8G4D30AEEA.K16FE 8GB

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Corsair VS1GB800D2 1GB

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Corsair CMK16GX4M1A2666C16 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT4G4DFS824A.C8FBR2 4GB

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ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

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Kingston KHX2400C14S4/4G 4GB

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Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB