Swissbit MEU25664D6BC2EP-30 2GB vs Kingston 9905678-023.A00G 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Kingston 9905678-023.A00G 8GB

Kingston 9905678-023.A00G 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Kingston 9905678-023.A00G 8GB

需要考虑的原因
Kingston 9905678-023.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 68

左右 -100% 更低的延时
更快的写入速度，GB/s

9.6 1,944.9

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Kingston 9905678-023.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 34
读取速度，GB/s

3,973.0 14.7
写入速度，GB/s

1,944.9 9.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

673 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

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Mushkin 991679ES 996679ES 2GB

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Corsair CMD64GX4M4C3000C15 16GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

Kingston MSISID4S9S8ME-8 8GB

Kingston MSISID4S9S8ME-8 8GB