Swissbit MEU25664D6BC2EP-30 2GB vs Kingston ACR26D4S9S1KA-4 4GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 14.3

测试中的平均数值

Kingston ACR26D4S9S1KA-4 4GB

需要考虑的原因
Kingston ACR26D4S9S1KA-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 68

左右 -62% 更低的延时
更快的写入速度，GB/s

11.0 1,944.9

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Kingston ACR26D4S9S1KA-4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 42
读取速度，GB/s

3,973.0 14.3
写入速度，GB/s

1,944.9 11.0
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

673 2074

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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Mushkin 991988 (996988) 4GB

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Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

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Samsung M391B5673EH1-CH9 2GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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AMD R538G1601U2S 8GB

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