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Swissbit MEU25664D6BC2EP-30 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB

Swissbit MEU25664D6BC2EP-30 2GB vs Ramaxel Technology RMUA5110MB78HAF2400 8GB

总分
star star star star star
Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分
star star star star star
Ramaxel Technology RMUA5110MB78HAF2400 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

差异 规格 评论

差异

Swissbit MEU25664D6BC2EP-30 2GB 需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.7
    测试中的平均数值
Ramaxel Technology RMUA5110MB78HAF2400 8GB 需要考虑的原因
Ramaxel Technology RMUA5110MB78HAF2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 68
    左右 -89% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 1,944.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Swissbit MEU25664D6BC2EP-30 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 36
  • 读取速度，GB/s
    3,973.0 left arrow 14.7
  • 写入速度，GB/s
    1,944.9 left arrow 9.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    673 left arrow 2488

Swissbit MEU25664D6BC2EP-30 2GB RAM的比较

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2933C16-8GTZRX 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2D3000C16 8GB
Corsair CMK16GX4M2D3000C16 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905668-001.A00G 8GB
Kingston 9905668-001.A00G 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK32GX4M4C3000C15 8GB
Corsair CMK32GX4M4C3000C15 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C16-4GVR 4GB
G Skill Intl F4-2800C16-4GVR 4GB
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Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2G40EB2-CTD 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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Kingston KHX3466C19D4/8G 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Corsair CMD32GX4M4B3200C16 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM