RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB

Samsung M378B5673EH1-CF8 2GB vs Micron Technology 8ATF1G64AZ-2G3E1 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
Micron Technology 8ATF1G64AZ-2G3E1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3E1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    12.7 left arrow 15.4
  • 写入速度，GB/s
    7.5 left arrow 11.3
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2713

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
SK Hynix HMA82GS6DJR8N-WM 16GB
SK Hynix HMA82GS6DJR8N-WM 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMR64GX4M4K3600C18 16GB
Corsair CMR64GX4M4K3600C18 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905744-027.A00G 16GB
Kingston 9905744-027.A00G 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 9905630-031.A00G 16GB
Kingston 9905630-031.A00G 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMK16GX4M2E4000C19 8GB
Corsair CMK16GX4M2E4000C19 8GB
内存RAM