takeMS International AG TMS2GB264D082-805G 2GB vs Apacer Technology 78.C1GM3.C7W0B 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Apacer Technology 78.C1GM3.C7W0B 8GB

Apacer Technology 78.C1GM3.C7W0B 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 78

左右 41% 更低的延时
更快的读取速度，GB/s

5 13.4

测试中的平均数值

Apacer Technology 78.C1GM3.C7W0B 8GB

需要考虑的原因
Apacer Technology 78.C1GM3.C7W0B 8GB

报告一个错误

更快的写入速度，GB/s

6.6 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Apacer Technology 78.C1GM3.C7W0B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 78
读取速度，GB/s

5,535.6 13.4
写入速度，GB/s

1,852.4 6.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 1526

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Apacer Technology 78.C1GM3.C7W0B 8GB

Apacer Technology 78.C1GM3.C7W0B 8GB

SK Hynix HMT451S6BFR8A-RD 4GB

SK Hynix HMT451S6BFR8A-RD 4GB

Kingston X7C75G-HYC 4GB

Kingston X7C75G-HYC 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Jinyu CL16-16-16 D4-2400 8GB

Jinyu CL16-16-16 D4-2400 8GB