takeMS International AG TMS2GB264D082-805G 2GB vs Asgard VMA45UG-MIC1U22T2 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Asgard VMA45UG-MIC1U22T2 8GB

Asgard VMA45UG-MIC1U22T2 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 69

左右 33% 更低的延时
更快的读取速度，GB/s

5 16.2

测试中的平均数值

Asgard VMA45UG-MIC1U22T2 8GB

需要考虑的原因
Asgard VMA45UG-MIC1U22T2 8GB

报告一个错误

更快的写入速度，GB/s

8.3 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Asgard VMA45UG-MIC1U22T2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 69
读取速度，GB/s

5,535.6 16.2
写入速度，GB/s

1,852.4 8.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1980

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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takeMS International AG TMS2GB264D082-805G 2GB

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Asgard VMA45UG-MIC1U22T2 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Kingston 99U5713-002.A00G 4GB

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Kingston KF552C40-16 16GB

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G Skill Intl F4-3600C16-16GTRSC 16GB

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Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

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Crucial Technology CT51264BA1339.D16F 4GB

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Samsung M378A2G43MB1-CTD 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905678-024.A00G 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston X5H5PW-MIE 8GB

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Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB