takeMS International AG TMS2GB264D082-805G 2GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 15.5

测试中的平均数值

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

12.9 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

5,535.6 15.5
写入速度，GB/s

1,852.4 12.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 3044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

G Skill Intl F4-2666C19-8GVR 8GB

G Skill Intl F4-2666C19-8GVR 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB