takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology CB16GU2666.C8ET 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 13.6

测试中的平均数值

Crucial Technology CB16GU2666.C8ET 16GB

需要考虑的原因
Crucial Technology CB16GU2666.C8ET 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 46

左右 -24% 更低的延时
更快的写入速度，GB/s

9.2 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CB16GU2666.C8ET 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 37
读取速度，GB/s

5,535.6 13.6
写入速度，GB/s

1,852.4 9.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 2722

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D083805EV 2GB

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Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Corsair CM4X4GD3000C15K4 4GB