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takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology CT4G4SFS8213.C8FBD2 4GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
12.9
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
46
左右 -92% 更低的延时
更快的写入速度,GB/s
6.0
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
24
读取速度,GB/s
5,535.6
12.9
写入速度,GB/s
1,852.4
6.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
1633
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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SK Hynix HMA82GU6AFR8N-TF 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Kingston ACR16D3LU1KBG/4G 4GB
Crucial Technology BLS4G3D1609DS1S00 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston KHX2133C13D4/8GX 8GB
报告一个错误
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Bug description
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