takeMS International AG TMS2GB264D082-805G 2GB vs Essencore Limited KD48GU88C-26N190A 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 13.5

测试中的平均数值

Essencore Limited KD48GU88C-26N190A 8GB

需要考虑的原因
Essencore Limited KD48GU88C-26N190A 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 -12% 更低的延时
更快的写入速度，GB/s

10.9 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Essencore Limited KD48GU88C-26N190A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 41
读取速度，GB/s

5,535.6 13.5
写入速度，GB/s

1,852.4 10.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 2797

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G32C16U4BL.M16FE 16GB

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AMD AE34G1601U1 4GB

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Corsair CMK8GX4M2B4133C19 4GB

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Avant Technology F641GU67F9333G 8GB

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Gloway International (HK) STKD4GAM2133-F 8GB

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Avant Technology F6451U64F9333G 4GB

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Samsung M471A1K1KCB1-CRC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hewlett-Packard 7EH64AA# 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology BL8G30C15U4R.8FE 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB