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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
G Skill Intl F4-3466C18-8GTZRXB 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
20.9
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB
报告一个错误
低于PassMark测试中的延时,ns
17
46
左右 -171% 更低的延时
更快的写入速度,GB/s
16.0
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
17
读取速度,GB/s
5,535.6
20.9
写入速度,GB/s
1,852.4
16.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
3550
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX318C10FR/8G 8GB
Apacer Technology 76.D305G.D060B 16GB
Kingston 99U5474-010.A00LF 2GB
Golden Empire CL19-25-25 D4-4000 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMWB8G1L2666A16W4 8GB
Kingston 99U5584-017.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GR7MFR8N-UH 16GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3466C16-4GVK 4GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
报告一个错误
×
Bug description
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