takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-4000C19-16GTZR 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 18.8

测试中的平均数值

G Skill Intl F4-4000C19-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 46

左右 -77% 更低的延时
更快的写入速度，GB/s

17.9 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-4000C19-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 26
读取速度，GB/s

5,535.6 18.8
写入速度，GB/s

1,852.4 17.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 4053

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905624-051.A00G 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Samsung M4 70T2864QZ3-CF7 1GB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KF3733C19D4/16GX 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

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G Skill Intl F4-4133C19-8GTZR 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Apacer Technology 78.CAGR4.DFC0B 8GB

Apacer Technology 78.CAGR4.DFC0B 8GB